Dear Professors, Colleagues, and Young Researchers,

Over the past two decades, III-nitride wide-bandgap (WBG) semiconductors have become a driving force in modern optoelectronics, emerging as the second-largest semiconductor market after silicon. GaN-based blue LEDs are now indispensable in solid-state lighting, displays, and consumer electronics.

Today, the field is advancing rapidly beyond blue, expanding both toward the ultraviolet (UVA, UVB, UVC, far-UVC) and the longer-wavelength visible and infrared regions. Materials such as InN, InGaN, and their alloys are critical in addressing challenges related to the “green gap”, enabling high-performance green, amber, and red LEDs, and paving the way for infrared optoelectronics and next-generation high-speed electronic devices.

Simultaneously, the introduction of novel wide-bandgap materials like hexagonal boron nitride (h-BN) has opened new frontiers. h-BN offers exceptional properties, including a large bandgap, excellent thermal stability, and atomically flat surfaces, making it highly suitable for quasi-van der Waals epitaxy, strain relaxation, and deep-UV optoelectronic applications.

Despite remarkable progress, critical challenges remain across the nitride material spectrum:

• Reducing dislocation density in AlGaN, InGaN, and InN-based systems

• Managing strain and alloy inhomogeneity in high-In-content InGaN for green–red emission

• Achieving efficient p-type doping in Al-rich materials

• Mitigating polarization-related efficiency losses

• Enhancing light extraction and thermal management

This session will highlight state-of-the-art advances in:

• III-nitride materials including AlGaN, GaN, InGaN, and InN alloys for UV, visible, and infrared devices

• Emerging wide-bandgap materials such as h-BN for UV and novel device platforms

• Cutting-edge epitaxial growth techniques including quasi-van der Waals growth, strain management, and heterostructure engineering

• High-performance UV LEDs, LDs, and visible light emitters, including green, amber, and red

• Reliability, efficiency, and safety of devices for real-world applications including healthcare, disinfection, quantum technologies, and communications

As nitride-based and wide-bandgap semiconductors increasingly underpin critical technologies in energy, environment, healthcare, and digital infrastructure, this session provides a timely platform for researchers, engineers, and innovators to share breakthroughs, foster collaboration, and shape the future of optoelectronics.

Selected papers from this session will be published in IEEE Xplore.

We sincerely invite your valuable contributions and look forward to welcoming you to this dynamic and impactful session.